Abstract
Since the past decades, CMOS devices have been reduced to achieve better performance in terms of speed, power dissipation, volume and reliability. The main area of interest in current CMOS technology is data retention and leakage reduction. SRAM (Static RAM) is the memory used to store data. Traditional static access memory (SRAM) cells suffer from an internal data instability problem because the data that is accessed is stored directly during the reading process. Noise margins in memory cells are reduced further with increased contrast and reduced power supply voltage in the changing CMOS technologies. A comparison is made between different SRAM cells based on different performance metrics, such as read delay, write delay, power dissipation, noise margin, and space in this document.